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Oxide-ion conduction in the Dion-Jacobson phase CsBi2Ti2NbO10-δ
Wenrui Zhang1, Kotaro Fujii1, Eiki Niwa1
1Department of Chemistry, School of Science, Tokyo Institute of Technology, 2-12-1 W4-17 O-okayama, Meguro-ku, Tokyo, 152-8551, Japan.
Abstract:
Oxide-ion conductors have found applications in various electrochemical devices, such as solid-oxide fuel cells, gas sensors, and separation membranes. Dion-Jacobson phases are known for their rich magnetic and electrical properties; however, there have been no reports on oxide-ion conduction in this family of materials. Here, for the first time to the best of our knowledge, we show the observation of fast oxygen anionic conducting behavior in CsBi2Ti2NbO10-δ. The bulk ionic conductivity of this Dion-Jacobson phase is 8.9 × 10-2 S cm-1 at 1073 K, a level that is higher than that of the conventional yttria-stabilized zirconia. The oxygen ion transport is attributable to the large anisotropic thermal motions of oxygen atoms, the presence of oxygen vacancies, and the formation of oxide-ion conducting layers in the crystal structure. The present finding of high oxide-ion conductivity in rare-earth-free CsBi2Ti2NbO10-δ suggests the potential of Dion-Jacobson phases as a platform to identify superior oxide-ion conductors.
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