Exploring the Limits of Transition-Metal Fluorination at High Pressures
Jianyan Lin1, Xin Du1, Martin Rahm2
1Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun, 130024, China.
Abstract:
Fluorination is a proven method for challenging the limits of chemistry, both structurally and electronically. Here we explore computationally how pressures below 300 GPa affect the fluorination of several transition metals. A plethora of new structural phases are predicted along with the possibility for synthesizing four unobserved compounds: TcF7 , CdF3 , OsF8 , and IrF8 . The Ir and Os octaflourides are both predicted to be stable as quasi-molecular phases with an unusual cubic ligand coordination, and both compounds formally correspond to a high oxidation state of +8. Electronic-structure analysis reveals that otherwise unoccupied 6p levels are brought down in energy by the combined effects of pressure and a strong ligand field. The valence expansion of Os and Ir enables ligand-to-metal F 2p→M 6p charge transfer that strengthens M-F bonds and decreases the overall bond polarity. The lower stability of IrF8 , and the instability of PtF8 and several other compounds below 300 GPa, is explained by the occupation of M-F antibonding orbitals in octafluorides with a metal-valence-electron count exceeding 8.
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