Related Experiment Video
Updated: Dec 26, 2025
09:06
Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
8.5K
Tuning ferromagnetism at room temperature by visible light
Bálint Náfrádi1, Péter Szirmai2, Massimo Spina2
1Laboratory of Physics of Complex Matter, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland; laszlo.forro@epfl.ch nafradi@yahoo.com.
Summary
Researchers developed a novel method to control ferromagnetism using light. A halide perovskite/oxide perovskite heterostructure enables light-induced magnetic bit rewriting at room temperature, paving the way for new memory devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Digital information storage relies on magnetic domain manipulation.
- Current methods for writing magnetic bits require significant energy.
- Correlated oxides offer potential for efficient magnetic control due to amplified electronic correlations.
Purpose of the Study:
- To present a novel, energy-efficient method for manipulating ferromagnetism.
- To demonstrate light-induced, reversible tuning of magnetic states at room temperature.
- To explore the potential of perovskite heterostructures for magnetic data storage.
Main Methods:
- Fabrication of a halide perovskite/oxide perovskite heterostructure.
- Utilizing photoinduced charge carriers from the photovoltaic perovskite layer.
- Investigating the doping effect on the magnetization of the ferromagnetic layer.
Main Results:
- Demonstrated reversible, light-induced tuning of ferromagnetism at room temperature.
- Showcased efficient doping of a ferromagnetic film by photoinduced charge carriers.
- Achieved a decrease in magnetization, enabling magnetic bit rewriting.
Conclusions:
- The developed heterostructure provides a radical method for light-induced magnetic manipulation.
- This approach allows for rapid rewriting of magnetic bits at room temperature.
- Opens new avenues for developing advanced magnetooptical memory devices.
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