Study of interfacial random strain fields in core-shell ZnO nanowires by scanning transmission electron microscopy

Imaging strain fields at the nanoscale is crucial for understanding the physical properties as well as the performance of oxide heterostructures and electronic devices. Based on scanning transmission electron microscopy (STEM) techniques, we successfully imaged the random strain field at the interface of core-shell ZnO nanowires. Combining experimental observations and image simulations, we find that the strain contrast originates from dechanneling of electrons and increased diffuse scattering induced by static atomic displacements. For a thin sample with a random strain field, a positive strain contrast appears in the low-angle annular dark-field (LAADF) image and a negative contrast in the high-angle annular dark-field (HAADF) image, but for a thick sample (> 120 nm), the positive contrast always occurs in both the LAADF and HAADF images. Through the analysis of the relationship between strain contrast and various parameters, we also discuss the optimum experimental condition for imaging random strain fields.