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Simulation, Fabrication and Characterization of THz Metamaterial Absorbers
Published on: December 27, 2012
Optical Transistor for Amplification of Radiation in a Broadband Terahertz Domain
K H A Villegas1, F V Kusmartsev2,3, Y Luo2
1Center for Theoretical Physics of Complex Systems, Institute for Basic Science (IBS), Daejeon 34126, Korea.
Abstract:
We propose a new type of optical transistor for a broadband amplification of terahertz radiation. It is made of a graphene-superconductor hybrid, where electrons and Cooper pairs couple by Coulomb forces. The transistor operates via the propagation of surface plasmons in both layers, and the origin of amplification is the quantum capacitance of graphene. It leads to terahertz waves amplification, the negative power absorption, and as a result, the system yields positive gain, and the hybrid acts like an optical transistor, operating with the terahertz light. It can, in principle, amplify even a whole spectrum of chaotic signals (or noise), which is required for numerous biological applications.

