Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

853
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
853
MOS Capacitor01:25

MOS Capacitor

1.4K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.4K
MOSFET01:16

MOSFET

1.0K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.0K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

702
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
702
Diode: Forward bias01:20

Diode: Forward bias

2.0K
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
2.0K
Diode: Reverse bias01:14

Diode: Reverse bias

1.6K
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
1.6K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Alternating atomic-dipole layers and switching dynamics in Al<sub>1-x</sub>Sc<sub>x</sub>N ferroelectrics.

Science (New York, N.Y.)·2026
Same author

Efficient and accurate neural-field reconstruction using resistive memory.

Nature·2026
Same author

Resistive memory-based neural differential equation solver for score-based diffusion model.

Nature communications·2026
Same author

High-speed energy-efficient memristor confined in sub-5 nm space with elemental oxygen reservoir layer.

Nature communications·2026
Same author

3D reconstruction and etching profile simulation for wiggling active area effect in dynamic random access memory manufacturing.

Communications engineering·2026
Same author

Dual-Band Infrared PbS Colloidal Quantum Dot Focal Plane Array.

Nature communications·2026

Related Experiment Video

Updated: Dec 26, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

8.0K

A highly CMOS compatible hafnia-based ferroelectric diode.

Qing Luo1, Yan Cheng2, Jianguo Yang1

  • 1Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences, No. 3 Beitucheng West Road, Chaoyang District, Beijing, 100029, China.

Nature Communications
|March 15, 2020
PubMed
Summary
This summary is machine-generated.

Researchers developed a 3D stackable ferroelectric diode using Hf0.5Zr0.5O2 films. This memory device offers high speed and density, overcoming the

More Related Videos

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

6.1K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.6K

Related Experiment Videos

Last Updated: Dec 26, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

8.0K
Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms
08:48

Demonstration of Spin-Multiplexed and Direction-Multiplexed All-Dielectric Visible Metaholograms

Published on: September 25, 2020

6.1K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.6K

Area of Science:

  • Materials Science
  • Solid State Physics
  • Electrical Engineering

Background:

  • The 'memory wall' limits performance in high-speed, high-density memory devices.
  • Ferroelectric materials offer potential for novel memory applications.

Purpose of the Study:

  • To demonstrate a scalable, 3D stackable ferroelectric diode.
  • To investigate the ferroelectric properties of Hf0.5Zr0.5O2 films for memory applications.

Main Methods:

  • Fabrication of a ferroelectric diode utilizing Hf0.5Zr0.5O2 films.
  • Atomic-resolution spherical aberration-corrected STEM for lattice imaging.
  • Implementation in an 8-layer 3D array.

Main Results:

  • Demonstrated a ferroelectric diode with rectifying polarity modulated by polarization reversal.
  • Identified the non-centrosymmetric Pca21 orthorhombic phase in Hf0.5Zr0.5O2.
  • Achieved operation speeds of 20 ns and endurance exceeding 109 cycles.
  • Exhibited built-in nonlinearity > 100 for self-selective properties.

Conclusions:

  • The Hf0.5Zr0.5O2 ferroelectric diode is a promising candidate for future memory hierarchies.
  • 3D stackable ferroelectric diodes can overcome memory limitations.
  • The identified Pca21 phase is crucial for device performance.