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The Hall Effect

The Hall Effect

Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.

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Related Experiment Video

Updated: Dec 26, 2025

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Published on: January 21, 2016

Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization.

Gabriele Calabrese¹, Lorenzo Pimpolari¹, Silvia Conti¹

¹Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Pisa 56122, Italy. gabriele.calabrese@dii.unipi.it.

|March 19, 2020

Summary

Inkjet-printed graphene films show promising electrical properties after thermal annealing. This study details their Hall mobility, magnetoresistance, and noise characteristics for potential electronic applications.

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Inkjet printing offers a scalable method for fabricating graphene-based devices.
Understanding the electrical transport properties of printed graphene is crucial for its integration into electronic applications.
Characterization of charge carrier mobility, sheet resistance, and noise is essential for assessing material quality.

Purpose of the Study:

To conduct a comprehensive electrical and low-frequency noise characterization of inkjet-printed graphene films.
To investigate the effect of thermal annealing on the stability and electrical properties of these films.
To determine the charge carrier mobility and sheet resistance as a function of film thickness and substrate.

Main Methods:

Room temperature Hall mobility measurements.
Low-temperature magnetoresistance analysis.
Low-frequency noise characterization.
Thermal annealing in vacuum at 450 °C.

Main Results:

Thermal annealing at 450 °C in vacuum is necessary for device stabilization.
Minimum sheet resistance achieved is 23.3 Ω sq^-1, with n-type doping and carrier concentrations in the 10²⁰ cm^-3 range.
Charge carrier mobility increases with film thickness, reaching 33 cm² V^-1 s^-1 for a 480 nm film on SiO₂/Si.
Low-frequency noise exhibits a 1/f behavior with a Hooge parameter between 0.1 and 1.

Conclusions:

Inkjet-printed graphene films can be effectively characterized after thermal annealing.
The study provides the first in-depth electrical and noise characterization of inkjet-printed graphene.
Results offer physical insights into charge transport mechanisms in these printed graphene films.