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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Chemistry

Background:

  • Topological insulators and their edge states are crucial for next-generation electronics.
  • Valleytronics utilizes electron valley properties for information processing.
  • Wide-gap semiconductors like SiC and BN offer unique electronic and chemical properties.

Purpose of the Study:

  • Investigate the valley Chern number and edge states in SiC and BN monolayers.
  • Explore the potential for quantum valley Hall effect in these materials.
  • Determine the feasibility of room-temperature applications based on topological properties.

Main Methods:

  • Density functional theory (DFT) calculations were employed.
  • Analysis of Berry curvature and valley Chern number.
  • Characterization of edge state dispersion within the bulk band gap.

Main Results:

  • SiC monolayer shows a non-quantized valley Chern number but possesses topologically protected gapless edge states.
  • A quantum valley Hall effect was identified in SiC, with doping enabling backscattering-free valley currents.
  • BN monolayer exhibits gapped edge states due to strong sublattice potential differences.

Conclusions:

  • SiC monolayers are promising candidates for valleytronics due to their topological edge states and potential for room-temperature operation.
  • The observed phenomena in SiC can be experimentally verified through doping-induced edge currents.
  • BN monolayers, with their gapped edge states, are less suitable for quantum valley Hall effect applications.