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Related Experiment Video

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Heterostructure and Q-factor engineering for low-threshold and persistent nanowire lasing.

Stefan Skalsky1, Yunyan Zhang2, Juan Arturo Alanis1

  • 11Department of Physics and Astronomy and The Photon Science Institute, The University of Manchester, Manchester, M13 9PL UK.

Light, Science & Applications
|March 21, 2020
PubMed
Summary

Researchers achieved continuous room temperature nanowire lasing in silicon-integrated optoelectronic devices. This breakthrough utilizes optimized quantum well nanowire lasers, enabling lower thresholds and multi-nanosecond lasing for advanced photonic applications.

Keywords:
Fluorescence spectroscopyNanowiresSemiconductor lasers

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Area of Science:

  • Semiconductor Nanowire Lasers
  • Optoelectronics
  • Quantum Well Physics

Background:

  • Continuous room temperature nanowire lasing is crucial for silicon-integrated optoelectronic elements.
  • Achieving this requires optimizing the lasing cavity's quality factor (Q-factor) and population inversion.
  • Existing III-V nanowire lasers face challenges in achieving efficient room temperature operation.

Purpose of the Study:

  • To investigate and enhance continuous room temperature nanowire lasing in GaAsP/GaAs quantum well structures.
  • To determine the Q-factor and reflectivity of the nanowire laser cavities.
  • To demonstrate a novel mechanism for achieving low-threshold, multi-nanosecond lasing.

Main Methods:

  • Application of time-gated optical interferometry to analyze lasing emission.
  • Fabrication of high-quality GaAsP/GaAs quantum well nanowire laser structures.
  • Optimization of direct-indirect band alignment in the active region.

Main Results:

  • High Q-factors of 1250 ± 90 were measured, corresponding to end-facet reflectivities of R = 0.73 ± 0.02.
  • A well-refilling mechanism creating a quasi-four-level system was demonstrated.
  • Record low room temperature lasing thresholds of approximately 6 μJ cm⁻² pulse⁻¹ were achieved for III-V nanowire lasers.

Conclusions:

  • The study presents a significant advancement in nanowire laser technology for silicon integration.
  • Optimized Q-factors and a quasi-four-level system enable efficient, low-threshold lasing at room temperature.
  • This work paves the way for continuously operating silicon-integrated nanolaser elements.