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Gamma-ray irradiation effects on tantalum thin film for improved mechanical compatibility and cytocompatibility
Ding Ding1, Dechuang Zhang2, Feng He3
1Key Laboratory of Thin Film Sensing Technology for National Defense of Hunan Province, China Electronics Technology Group Corporation 48th Research Institute, Changsha 410111, China; School of Physic and Microelectronics, Hunan University, Changsha 410082, China.
Abstract:
In this work, tantalum thin films were prepared on titanium substrates by an ion beam sputtering method. Tantalum thin films were irradiated by gamma-ray with different total dose levels. The effect of irradiation on the phase composition, microstructure, surface morphology, and chemical resistance were analyzed. Besides, in vitro cytocompatibility of tantalum films treated with different radiation doses were evaluated via 3T3-E1 cells. Experimental results showed that higher radiation dose resulted in reductions in crystalline nature, denser morphology, lower elastic modulus, less oxygen vacancies and better corrosion resistance. Additionally, 3T3-E1 cells adhered and spread well on the surface of tantalum film with irradiation exposure to 10 kGy. The dense surface morphology, less density of chemical defects and amorphous phase produced by the gamma-ray irradiation played a major role in the improvement of mechanical compatibility, electrochemical stability property along with the cytocompatibility of the tantalum films.
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