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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

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Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors.

Maria El Abbassi^1,2,3, Mickael L Perrin¹, Gabriela Borin Barin¹

¹Empa, Swiss Federal Laboratories for Materials Science and Technology, CH-8600 Dübendorf, Switzerland.

|April 1, 2020

Summary

Atomically precise graphene nanoribbons (GNRs) show quantum dot behavior in devices. These narrow-bandgap 5-atom-wide GNRs function as single-electron transistors below 150 K, paving the way for advanced nanoelectronics.

Keywords:

Coulomb blockade Raman spectroscopy device integration graphene nanoribbons molecular spectroscopy

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Graphene nanoribbons (GNRs) are promising quantum-designed materials for electronics.
Challenges include reliable contacting and preserving properties during device integration.

Purpose of the Study:

Investigate the quantum dot behavior of atomically precise GNRs in a device geometry.
Demonstrate the feasibility of using GNRs in nanoelectronic applications.

Main Methods:

Fabrication of devices with aligned five-atom-wide GNRs (5-AGNRs) on graphene electrodes with a sub-5 nm nanogap.
Experimental transport measurements at room temperature and below 150 K.
Density Functional Theory (DFT) calculations.

Main Results:

5-AGNRs exhibit metal-like behavior at room temperature.
Single-electron transistor behavior observed below 150 K.
Spectroscopy revealed addition energies of 200-300 meV, consistent with DFT predictions.
Preservation of molecular levels upon device integration demonstrated.

Conclusions:

Atomically precise GNRs can be integrated into devices while retaining their quantum properties.
This work is a significant step towards realizing exotic GNR-based nanoelectronic devices.