2D modeling of silicon optical PN phase shifter.

Area of Science:

• Photonics and Semiconductor Devices
• Optical Engineering
• Device Modeling

Background:

• Silicon photonics is crucial for integrated optical circuits.
• Accurate modeling of optical phase shifters is essential for device optimization.
• Existing modeling tools can be computationally expensive and inaccessible.

Purpose of the Study:

• To develop a fast, accurate, and accessible 2D analytical model for silicon lateral PN optical phase shifters.
• To enable multi-parameter study and optimization of device performance.
• To validate the model against technology computer-aided design (TCAD) simulations.

Main Methods:

• Utilized the effective index method for mode properties and 2D mode field construction.
• Modeled the PN diode considering fringing electric fields for an accurate depletion region.
• Incorporated scattering loss (Payne-Lacey) and free-carrier absorption (Soref) models.
• Calculated performance metrics using 2D modal overlap with 2D carrier distribution.

Main Results:

• The 2D model accurately predicts phase shift, absorption loss, modulation efficiency, and insertion loss.
• Model results show good agreement with TCAD simulations.
• The model successfully accounts for fringing electric fields and multiple loss components.

Conclusions:

• The presented analytical model offers a computationally efficient and accurate alternative to commercial tools for silicon PN optical phase shifter design.
• The model facilitates comprehensive multi-parameter studies, including waveguide dimensions, wavelength, doping, and applied voltage.
• This approach enhances the accessibility and speed of optimizing silicon photonic device performance.