Mid-infrared hybrid Si/VO2 modulator electrically driven by graphene electrodes
Related Experiment Video
Updated: Dec 25, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Abstract:
Silicon photonic platforms are of significant interest for a variety of applications that operate in the mid-infrared regime. However, the realization of efficient mid-IR modulators, key components in any integrated optics platform, is still a challenging topic. Here, an ultra-compact high-speed hybrid Si/VO2 modulator operating at a mid-IR wavelength of 3.8 μm is presented. Electrical properties of graphene are employed to achieve a reversible insulating-metal phase transition in VO2 by electrical actuation. The thermal characteristics of graphene are employed to improve the response time of the VO2 phase transition through speed up heating and dissipation processes, thus enhancing the modulation speed. Optical and thermal simulations show an extinction ratio of 4.4 dB/μm, an insertion loss of 0.1 dB/μm, and high modulation speed of 23 ns. A larger modulation depth as high as 10 dB/μm can be achieved at the cost of lower modulation speed.
More Related Videos
11:42Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
09:15Iridium Oxide-reduced Graphene Oxide Nanohybrid Thin Film Modified Screen-printed Electrodes as Disposable Electrochemical Paper Microfluidic pH Sensors
Published on: November 22, 2016
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
IR Absorption Frequency: Hybridization
Among the sp, sp2, and sp3 hybridized orbitals, sp orbitals have the maximum s character (50%). Consequently, the electrons are held more closely to the nucleus, resulting in stronger and shorter C–H bonds that...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...