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Three-dimensional detection and quantification of defects in SiC by optical coherence tomography
Applied Optics
|April 1, 2020
Summary
Optical coherence tomography (OCT) offers a noninvasive 3D defect detection method for silicon carbide (SiC) wafers. This technique accurately identifies and analyzes various SiC defects, aiding process control and understanding defect formation.
Area of Science:
- Materials Science
- Semiconductor Physics
- Optical Engineering
Background:
- Silicon carbide (SiC) is crucial for high-power electronics.
- Defects in SiC degrade device performance and reduce manufacturing yield.
- Accurate defect detection is vital for SiC process control.
Purpose of the Study:
- To demonstrate a noninvasive 3D defect detection method for SiC.
- To analyze various types of defects in SiC wafers.
- To provide insights into SiC defect formation mechanisms.
Main Methods:
- Utilized optical coherence tomography (OCT) for noninvasive imaging.
- Inspected and analyzed defects such as triangular defects, hexagonal voids, grain boundaries, and carrot defects.
- Acquired 3D images to determine defect structures, dimensions, locations, and orientations.
Main Results:
- Successfully demonstrated 3D defect detection in SiC wafers using OCT.
- Provided detailed 3D structural and dimensional information of various defects.
- Mapped the locations and orientations of internal SiC defects.
Conclusions:
- OCT is a valuable tool for rapid, noninvasive 3D defect screening in SiC manufacturing.
- The technique facilitates a deeper understanding of SiC defect formation mechanisms.
- OCT enhances quality control and process optimization for SiC devices.
