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Unidirectional emission of GaN-based eccentric microring laser with low threshold
Optics Express
|April 1, 2020
Summary
Researchers developed an eccentric microring using Gallium Nitride (GaN) to lower lasing thresholds and enhance unidirectional laser emission in microcavities. This novel structure significantly improves microcavity laser performance.
Area of Science:
- Optics and Photonics
- Materials Science
Background:
- Whispering gallery mode (WGM) microcavities are crucial for laser applications.
- Achieving low lasing thresholds and unidirectional emission in microcavities remains a challenge.
Purpose of the Study:
- To propose and demonstrate a novel GaN-based eccentric microring structure.
- To reduce the lasing threshold and achieve unidirectional emission in WGM microcavities.
Main Methods:
- Fabrication of an eccentric microring with an off-center inner hole in Gallium Nitride (GaN).
- Characterization of lasing properties, including threshold, unidirectionality, and Q factor.
- Finite-difference time-domain (FDTD) numerical simulations to analyze field distribution and far-field profiles.
Main Results:
- The eccentric microring demonstrated a reduction in lasing threshold by up to 53% compared to a microdisk.
- High unidirectionality of laser emission was achieved with a far-field divergence angle of approximately 40°.
- A high Q factor of 6388 was maintained for the whispering gallery modes.
- FDTD simulations confirmed that hole position and size control the far-field emission profile.
Conclusions:
- The eccentric microring structure significantly enhances the performance of WGM microcavity lasers.
- This simple yet effective design offers important guidance for developing advanced microcavity lasers.
- The ability to control far-field emission through structural modifications opens new avenues for laser design.
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