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Deterministic Spin-Orbit Torque Switching by a Light-Metal Insertion.

Armin Razavi1, Hao Wu1, Qiming Shao1,2

  • 1Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States.

Nano Letters
|April 2, 2020
PubMed
Summary
This summary is machine-generated.

Researchers developed a new method for spin-orbit torque (SOT) switching of magnetization, enabling deterministic switching without external magnetic fields. This breakthrough advances spintronic memory and logic applications for practical use.

Keywords:
Spin−orbit torquedeterministic switchingfield-free switchingmagnetic thin filmsspintronicsstructural asymmetry

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Area of Science:

  • Spintronics
  • Materials Science
  • Condensed Matter Physics

Background:

  • Spin-orbit torque (SOT) switching is crucial for nonvolatile spintronic memory and logic.
  • Deterministic SOT switching of perpendicular magnetization typically needs external magnetic fields, hindering practical applications.

Purpose of the Study:

  • To enable deterministic SOT switching of magnetization without external magnetic fields.
  • To provide a practical route for wafer-scale utilization of SOT technology.

Main Methods:

  • Insertion of a slightly asymmetric light-metal layer at the heavy metal-ferromagnet interface in SOT heterostructures.
  • Characterization of current-induced out-of-plane effective magnetic fields.
  • Evaluation of perpendicular magnetic anisotropy and switching current density.
  • Scalability studies across devices differing by two orders of magnitude.

Main Results:

  • Introduced current-induced out-of-plane effective magnetic fields enabling deterministic switching without external fields.
  • Achieved uniform perpendicular magnetic anisotropy and switching current density.
  • Demonstrated scalability of the approach for various device sizes.

Conclusions:

  • The insertion of an asymmetric light-metal layer offers a practical method for SOT magnetization switching.
  • This work paves the way for the widespread application of SOT-based spintronic devices.