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Fabricating van der Waals Heterostructures with Precise Rotational Alignment
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Wavelength-Tunable Interlayer Exciton Emission at the Near-Infrared Region in van der Waals Semiconductor

Lihui Li1, Weihao Zheng2, Chao Ma2

  • 1Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China.

Nano Letters
|April 3, 2020
PubMed

Keywords:
interlayer band gapinterlayer excitonnear-infrared regiontransition metal dichalcogenidesvan der Waals heterostructures

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