Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET01:16

MOSFET

1.0K
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
1.0K
Characteristics of MOSFET01:17

Characteristics of MOSFET

806
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
806
MOSFET Amplifiers01:17

MOSFET Amplifiers

408
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
408
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

697
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
697
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

744
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
744
Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

992
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
992

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Electron Spin Resonance Sensor for Portable and Adaptable Retrospective Dosimetry.

ACS sensors·2026
Same author

Recent advances in microresonators and supporting instrumentation for electron paramagnetic resonance spectroscopy.

The Review of scientific instruments·2022
Same author

Scalable microresonators for room-temperature detection of electron spin resonance from dilute, sub-nanoliter volume solids.

Science advances·2020
Same author

Nonresonant Transmission Line Probe for Sensitive Interferometric Electron Spin Resonance Detection.

Analytical chemistry·2019
Same author

[Hemodynamic effects of synchronous and asynchronous independent lung ventilation with different levels of positive end-expiratory pressure and tidal volumes on unilateral lung injury in dogs].

Zhonghua jie he he hu xi za zhi = Zhonghua jiehe he huxi zazhi = Chinese journal of tuberculosis and respiratory diseases·2010
Same author

[Study on the immuno-effects and influencing factors of Chinese hamster ovary (CHO) cell hepatitis B vaccine among adults, under different dosages].

Zhonghua liu xing bing xue za zhi = Zhonghua liuxingbingxue zazhi·2010
Same journal

Correction: Kang et al. Fluid Flow to Electricity: Capturing Flow-Induced Vibrations with Micro-Electromechanical-System-Based Piezoelectric Energy Harvester. <i>Micromachines</i> 2024, <i>15</i>, 581.

Micromachines·2026
Same journal

Femtosecond Laser Texturing of Wood Coatings with Bio-Based Epoxy and Wax Additives for Enhanced Hydrophobicity.

Micromachines·2026
Same journal

Engineering of Optoelectronic Devices for Renewable Energy Applications.

Micromachines·2026
Same journal

Phase Transformation and Electrochemical Behavior of Hexagonal TiO<sub>2</sub> Nanotubes Under Different Annealing Temperatures and Heating Rates.

Micromachines·2026
Same journal

Process Optimization and Predictive Modeling of Femtosecond Laser Precision Milling for Commercial PMMA Slices.

Micromachines·2026
Same journal

A Hybrid Preprocessing Multi-Objective Surrogate Model for Thermal MEMS Actuators.

Micromachines·2026
See all related articles

Related Experiment Video

Updated: Dec 25, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.3K

Nanoscale MOSFET as a Potential Room-Temperature Quantum Current Source.

Kin P Cheung1, Chen Wang2, Jason P Campbell1

  • 1Nanoscale Device Characterization Division, National Institute of Standards & Technology, Gaithersburg, MD 20899, USA.

Micromachines
|April 5, 2020
PubMed
Summary
This summary is machine-generated.

Researchers demonstrated a single-defect metal-oxide-semiconductor field-effect transistor (MOSFET) validates the one charge pumped per cycle mechanism. This finding advances the development of precise quantized current sources for electronic applications.

Keywords:
mosfetnanoscalequantum current

More Related Videos

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.1K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.9K

Related Experiment Videos

Last Updated: Dec 25, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.3K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.1K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.9K

Area of Science:

  • Solid State Physics
  • Quantum Electronics
  • Nanotechnology

Background:

  • Quantized current sources are crucial for metrology and quantum electronics.
  • Metal-oxide-semiconductor field-effect transistors (MOSFETs) offer potential platforms for realizing single-electron devices.
  • Charge pumping in nanoscale devices is a proposed mechanism for generating precise charge transfer.

Purpose of the Study:

  • To experimentally validate the single-charge pumping mechanism in a nanoscale MOSFET with a single interface defect.
  • To assess the precision of the charge pumping process for potential use as a quantized current source.
  • To enhance the understanding of charge pumping physics and error sources.

Main Methods:

  • Fabrication and characterization of a nanoscale MOSFET containing a single interface defect.
  • Experimental investigation of charge pumping dynamics under varying electrical biases.
  • Analysis of experimental data to confirm the one-charge-per-cycle transfer mechanism.

Main Results:

  • Experimental evidence confirms that a single defect in the MOSFET interface pumps exactly one elementary charge per driving cycle.
  • The observed charge pumping behavior aligns with theoretical predictions for single-electron turnstile operation.
  • Identification and discussion of known and potential error sources affecting pumping precision.

Conclusions:

  • The single-defect MOSFET effectively demonstrates the fundamental charge pumping mechanism with high precision.
  • This validates the potential of MOSFET-based devices as building blocks for highly accurate quantized current standards.
  • Further research into optimizing device design and mitigating errors is warranted for practical applications.