Insight into the vacancy effects on mechanical and electronic properties of V5Si3 silicides from first-principles
Xudong Zhang1, Tianhui Dong1, He Ma1
1School of Science, Shenyang University of Technology, Shenyang, 110870, China.
Abstract:
As so far, the development and application prospects of transition metal silicon-based materials have received the considerable attention. V-Si silicides are one of the most important silicon-based high-temperature materials. Brittle behavior hinders their wide application. In present work, the influence of vackancies on mechanical properties, brittle/ductile behavior and electronic properties of V5Si3 silicides is studied using the first-principles calculations. The vacancy formation energy, elastic constants, elastic modulus, brittle/ductile behavior and electronic behavior of the perfect V5Si3 and V5Si3 with vacancies were comparatively calculated and discussed, respectively. The thermodynamic data and phonon frequencies demonstrate that the V5Si3 with different vacancies can exhibit the structural stability. Although the vacancies weaken the hardness of V5Si3, the vacancies improve the brittle behavior of the parent V5Si3. Especially, the Si-Va1 and Si-Va2 vacancies in V5Si3 induced brittle-to-ductile transition for V5Si3 desilicides. The electronic structures explain the mechanism of the difference of mechanical properties for different vacancies.
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