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Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
Published on: June 9, 2023
The oxygen ion conductivity of Lu doped ceria
Julius Koettgen1,2,3,4, Gerald Dück1, Manfred Martin1,2,5,6
1Institute of Physical Chemistry, RWTH Aachen University, Landoltweg 2, 52056 Aachen, Germany.
Abstract:
The oxygen ion conductivity of polycrystalline samples of Lu doped ceria is studied using impedance spectroscopy. Lutetium doped ceria is of particular interest as Lu has a similar ionic radius as the host cation Ce. The change of the ionic conductivity as a function of the Lu dopant fraction is investigated in detail revealing a similar behavior as Sm doped ceria that has one of the highest ionic conductivity in ternary cerium oxides. In comparison with simulations, the experimental dependence of the conductivity on the dopant fraction reveals that migration barriers for oxygen vacancy jumps around Lu ions are slightly higher than for jumps in pure ceria. The absolute conductivity is small due to the strong trapping of oxygen vacancies near Lu dopants.
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