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Updated: Dec 25, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Controlled growth of large-scale uniform 1T' MoTe2 crystals with tunable thickness and their photodetector
Xiaojian Wang1, Jing Shang, Meijie Zhu
1MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, School of Science, Northwestern Polytechnical University, Xi'an 710072, P. R. China. zhengjianbang@nwpu.edu.cn.
Abstract:
The monoclinic-phase 1T' MoTe2 crystal exhibits inversion symmetry as an anisotropic semi-metal, dictating its interesting quantum transport phenomenon and other novel physical properties. However, large-scale controllable growth of uniform MoTe2 crystals still remains a great challenge, hindering its further fundamental research and applications for novel devices. Herein, we report a modified growth method for synthesizing few-layer 1T' MoTe2 crystals with large-scale uniformity with the assistance of molecular sieves. The theoretical simulations demonstrated that due to the temperature-dependent formation energies of different edges, the edge of (010) orientation shows a higher thermodynamic stability than that of (100) orientation, and results in the anisotropic growth behavior of 1T' MoTe2 crystals while the temperature changes. The photoresponse of tri-layer 1T' MoTe2-based devices shows a broad-spectrum response from 532 nm to 1550 nm. The photo-response time of 1T' MoTe2 crystals demonstrates that it supposes to be the synergistic mechanism of photo-conductive and photo-radiation effects. Our findings not only provide a method for the controllable growth of anisotropic two-dimensional materials at a wafer scale, but also explore a broad-spectrum photodetector with the MoTe2-based device.
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