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Semiconductors

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

Band Theory

Band Theory

When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...

Energy Bands in Solids

Energy Bands in Solids

Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
Band Formation:
When atoms are brought close together, as in a solid, these discrete energy levels begin to split due to the overlap of electron orbitals from adjacent atoms. This split occurs because of the Pauli exclusion principle, which states...

Metal-Semiconductor Junctions

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

Fermi Level Dynamics

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...

Types of Semiconductors

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...

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Related Experiment Video

Updated: Dec 25, 2025

Combining Solid-state and Solution-based Techniques: Synthesis and Reactivity of ChalcogenidoplumbatesII or IV

Combining Solid-state and Solution-based Techniques: Synthesis and Reactivity of ChalcogenidoplumbatesII or IV

Published on: December 29, 2016

Wide Band Gap Chalcogenide Semiconductors.

Rachel Woods-Robinson^1,2,3, Yanbing Han^1,4, Hanyu Zhang¹

¹Materials Science Center, National Renewable Energy Laboratory Golden, Colorado 80401, United States.

Chemical Reviews

|April 7, 2020

Summary

Wide band gap chalcogenide semiconductors offer unique advantages for electronic and energy applications. This review highlights their potential, exploring materials, properties, and applications in optoelectronics.

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Last Updated: Dec 25, 2025

Combining Solid-state and Solution-based Techniques: Synthesis and Reactivity of ChalcogenidoplumbatesII or IV

Combining Solid-state and Solution-based Techniques: Synthesis and Reactivity of ChalcogenidoplumbatesII or IV

Published on: December 29, 2016

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Area of Science:

Materials Science
Solid State Physics
Semiconductor Physics

Background:

Wide band gap semiconductors are crucial for modern electronics and energy technologies.
Transparent conductive oxides (TCOs), nitrides, and carbides are established materials, while chalcogenides remain underexplored.
Chalcogenides exhibit desirable properties like p-type doping, high mobility, and low ionization potentials.

Purpose of the Study:

To provide a comprehensive review of wide band gap chalcogenide semiconductors.
To outline design principles and research methodologies for transparent semiconductors.
To explore current progress and future directions in chalcogenide materials for optoelectronics.

Main Methods:

Review of existing literature on wide band gap chalcogenides.
Analysis of materials design parameters and research methods.
Summarization of experimental and computational findings on chalcogenide properties and applications.

Main Results:

Chalcogenide semiconductors, including II-VI binaries, chalcopyrites, sulvanites, and 2D materials, show promise for optoelectronic devices.
Computational predictions suggest new candidate materials within this class.
Applications span photovoltaic and photoelectrochemical solar cells, transistors, and light-emitting diodes.

Conclusions:

Wide band gap chalcogenides represent an emerging class of transparent semiconductors with significant potential.
Further research into their unique properties can drive innovation in optoelectronic devices.
This review aims to stimulate continued investigation and development in the field.