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Updated: Dec 24, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Peng Luo1, Fuwei Zhuge, Qingfu Zhang
1State Key Laboratory of Material Processing and Die & Mould Technology, School of Material Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China. zhugefw@hust.edu.cn zhaity@hust.edu.cn.
Precisely controlling doping in 2D metal chalcogenides (MXs) is key for advanced electronics. This review covers doping strategies like substitution and charge transfer to enhance MX material properties for future devices.
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