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Simulations and Design of a Single-Photon CMOS Imaging Pixel Using Multiple Non-Destructive Signal Sampling
Konstantin D Stefanov1, Martin J Prest1, Mark Downing2
1Centre for Electronic Imaging, The Open University, Walton Hall, Milton Keynes MK7 6AA, UK.
Sensors (Basel, Switzerland)
|April 9, 2020
Summary
This study introduces a new single-photon CMOS image sensor (CIS) design. Averaging multiple non-destructive signal samples significantly reduces readout noise, enabling reliable single-photon detection.
Area of Science:
- Electronics
- Photonics
- Semiconductor Devices
Background:
- Traditional CMOS image sensors (CIS) face limitations in detecting extremely low light levels.
- Achieving reliable single-photon detection is crucial for advanced scientific and industrial imaging.
Purpose of the Study:
- To design and simulate a novel CIS pixel architecture capable of single-photon detection.
- To investigate methods for reducing electronic readout noise in CIS pixels.
Main Methods:
- A pinned photodiode (PPD) based pixel design utilizing multiple, non-destructive charge transfers and sampling.
- TCAD simulations were performed to evaluate noise performance based on sampling parameters and device characteristics.
- Analysis of charge transfer inefficiency (CTI) and its impact on overall performance.
Main Results:
- Simulations demonstrate that averaging multiple independent signal measurements significantly reduces readout noise.
- The proposed design shows potential for distinguishing single photons reliably.
- Noise performance was analyzed as a function of sampling rate, capacitance, and transistor properties.
Conclusions:
- The developed pixel architecture shows promise for achieving single-photon imaging capabilities.
- This technology could lead to significant advancements in scientific and industrial imaging applications.
- Trade-offs between noise reduction and readout speed were identified, along with the impact of CTI.

