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Updated: Dec 24, 2025

Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices

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Published on: December 7, 2017

High-speed, solution-coatable memory based on Cu-SiO₂ core-shell nanowires.

Patrick F Flowers¹, Matthew J Catenacci, Benjamin J Wiley

¹Department of Chemistry, Duke University, Durham, North Carolina 27708, USA. benjamin.wiley@duke.edu.

Nanoscale Horizons

|April 9, 2020

Summary

This summary is machine-generated.

Researchers developed printable non-volatile memory using copper-silicon dioxide core-shell nanowires. This breakthrough offers a solution-coatable alternative to silicon-based devices, paving the way for printable computers and the Internet of Things.

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Area of Science:

Materials Science
Nanotechnology
Electronics Engineering

Background:

Printable electronics offer reduced costs and on-demand circuit prototyping.
A key challenge is developing solution-coatable non-volatile memory comparable to silicon devices.

Purpose of the Study:

To demonstrate a novel non-volatile memory solution for printable electronics.
To overcome limitations of current memory technologies for large-scale integration.

Main Methods:

Fabrication of Cu-SiO2 core-shell nanowires.
Solution-based printing of memory cells.
Characterization of memory performance metrics.

Main Results:

Achieved high on-off ratios (10^6) and fast switching speeds (50 ns).
Demonstrated low operating voltage (2 V) and endurance over 10^4 cycles.
Performance metrics comparable to or exceeding silicon-based Flash memory, with 20x faster write speeds.

Conclusions:

Cu-SiO2 core-shell nanowire memory is a viable solution for printable electronics.
Enables the development of complex, embedded computing devices for the Internet of Things.
Advances the field of on-demand electronic circuit fabrication.