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High-efficiency omnidirectional photoresponses based on monolayer lateral p-n heterojunctions
Meng-Lin Tsai1, Ming-Yang Li, Yumeng Shi
1Computer, Electrical and Mathematical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia. jrhau.he@kaust.edu.sa.
Abstract:
Electrical and optical properties of lateral monolayer WSe2-MoS2 p-n heterojunctions were characterized to demonstrate a high responsivity of 0.26 A W-1 with an excellent omnidirectional photodetection capability. The heterojunction functioning as a diode exhibits a prominent gate-tuning behavior with an ideality factor of 1.25. In addition, ultrafast photoresponse, low-light detectability, and high-temperature operation have been achieved. These unique characteristics pave a way for the future development of sub-nano semiconductor devices.
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