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Related Experiment Video

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Gate-Tunable Reversible Rashba-Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature.

Lijun Li1, Jin Zhang2, Gyuho Myeong1

  • 1Department of Physics, Korean Advanced Institute of Science and Technology, Daejeon 34141, Korea.

ACS Nano
|April 9, 2020
PubMed
Summary

We observed the Rashba-Edelstein effect (REE) and spin galvanic effect (SGE) in graphene/TaS2 heterostructures. Gate voltage controls spin polarization, enabling low-power spintronic circuits.

Keywords:
Rashba−Edelstein effectcharge-to-spin conversiongraphene/transition-metal dichalcogenide heterostructuresspin galvanic effectspintronicsspin−orbit coupling

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • The Rashba-Edelstein effect (REE) and spin galvanic effect (SGE) are crucial for spintronics.
  • Graphene and transition metal dichalcogenides (TMDs) are promising 2D materials for electronic devices.

Purpose of the Study:

  • To investigate current-induced spin polarization and its reciprocal effects in a few-layer graphene/2H-TaS2 heterostructure.
  • To demonstrate gate-tunable control over spin polarization for potential spintronic applications.

Main Methods:

  • Fabrication of a few-layer graphene/2H-TaS2 heterostructure.
  • Spin-sensitive electrical measurements at room temperature.
  • First-principles relativistic electronic structure and transport calculations.

Main Results:

  • Observation of the Rashba-Edelstein effect (REE) and spin galvanic effect (SGE) at room temperature.
  • Full spin-polarization reversal achieved via applied gate voltage.
  • Demonstration of gate-tunable charge-to-spin conversion attributed to interface-induced Bychkov-Rashba interaction.

Conclusions:

  • The graphene/2H-TaS2 heterostructure exhibits emergent 2D Dirac Fermions with robust spin-helical structure.
  • Reversible electrical control of nonequilibrium spin polarization was achieved in a nonmagnetic material.
  • This work presents a viable route for designing low-power spin-logic circuits using layered materials.