Related Experiment Video
Updated: Aug 4, 2026
09:03
A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
Published on: January 7, 2019
7.6K
A Poly Resistor Based Time Domain CMOS Temperature Sensor with 9b SAR and Fine Delay Line
1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.
Sensors (Basel, Switzerland)
|April 10, 2020
Summary
This study introduces a novel CMOS temperature sensor for precise, linear temperature measurements. The new design achieves high accuracy and efficiency, making it suitable for various applications.
Area of Science:
- Electrical Engineering
- Microelectronics
- Sensor Technology
Background:
- Accurate temperature sensing is crucial in numerous electronic systems.
- Existing CMOS temperature sensors face challenges in linearity, accuracy, and energy efficiency.
Purpose of the Study:
- To develop and characterize a new time-domain CMOS temperature sensor.
- To improve temperature linearity and reduce measurement error using a novel design.
Main Methods:
- Implementation of a 9-bit successive approximation register (SAR) control logic.
- Utilization of a fine delay line and an N-type poly resistor as the sensing element.
- Fabrication in a standard 0.18 μm bulk CMOS process.
Main Results:
- Achieved a temperature resolution of 0.49 °C.
- Demonstrated a low temperature error of -1.6 to +0.6 °C over 0-100 °C after calibration.
- Reported a supply voltage sensitivity of 0.085 °C/mV, a conversion rate of 25 kHz, and energy efficiency of 7.2 nJ/sample.
Conclusions:
- The developed CMOS temperature sensor offers high linearity and accuracy.
- The design demonstrates excellent energy efficiency and low supply voltage sensitivity.
- This sensor is a promising candidate for integrated temperature monitoring applications.
