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Published on: June 28, 2018
Bias induced spin state transition mediated by electron excitations
Hua Hao1, Ting Jia1, Xiaohong Zheng1
1Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China.
This study proposes a mechanism for bias-induced spin state transitions in molecular junctions. Metal-to-ligand charge transfer (MLCT) and metal-centered (MC) excitations explain low-to-high spin and high-to-low spin transitions, respectively.
Area of Science:
- Molecular spintronics
- Quantum phenomena in molecular junctions
Background:
- Spin state transitions in molecular systems can be induced by external stimuli.
- Bias voltages in molecular junctions can induce electronic excitations.
- Light-induced spin transitions are known via metal-to-ligand charge transfer (MLCT) and metal-centered (MC) excitations.
Purpose of the Study:
- To elucidate the mechanism behind bias-induced spin state transitions in molecular junctions.
- To propose a model connecting electronic excitations to spin transitions under bias voltage.
- To provide a theoretical basis for designing molecular spintronic devices.
Main Methods:
- Theoretical modeling based on first-principles calculations.
- Comparison of theoretical predictions with experimental observations of spin transitions.
- Analysis of inelastic electron cotunneling in molecular junctions.
Main Results:
- Proposed that MLCT excitation drives low-spin (LS) to high-spin (HS) transitions under bias.
- Proposed that MC excitation drives HS to LS transitions under bias.
- Theoretical threshold voltages for MLCT and MC excitations align with experimental transition voltages.
Conclusions:
- The proposed mechanism successfully explains bias-induced spin state transitions and their polarity dependence.
- This work offers critical insights for the development of molecular spintronic devices.
- Understanding these mechanisms is key for controlling spin states via electrical bias.
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