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Updated: Dec 24, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Abhishek Bhat1, Omar Elleuch1,2, Xiaorui Cui1
1Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706, United States.
This study demonstrates growing germanium-silicon (GeSi) alloy single crystals using a nanomembrane platform. This method enables the fabrication of novel group IV alloys for advanced optoelectronic devices.
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