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High-Ge-Content SiGe Alloy Single Crystals Using the Nanomembrane Platform.

Abhishek Bhat1, Omar Elleuch1,2, Xiaorui Cui1

  • 1Department of Materials Science and Engineering, University of Wisconsin, Madison, Wisconsin 53706, United States.

ACS Applied Materials & Interfaces
|April 14, 2020
PubMed
Summary
This summary is machine-generated.

This study demonstrates growing germanium-silicon (GeSi) alloy single crystals using a nanomembrane platform. This method enables the fabrication of novel group IV alloys for advanced optoelectronic devices.

Keywords:
III−VSiGenanomembraneovergrowthreleasetransfer

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Semiconductor Technology

Background:

  • Germanium-silicon (GeSi) alloys are crucial for advanced semiconductor devices.
  • Current methods face limitations in achieving desired compositions and crystal quality.
  • Strain relaxation is a key challenge in growing high-quality GeSi films.

Purpose of the Study:

  • To demonstrate the growth of Ge-rich SiGe alloys over an extended composition range.
  • To develop a method for fabricating novel group IV alloys for optoelectronics.
  • To overcome strain limitations in epitaxial growth of SiGe.

Main Methods:

  • Utilizing a nanomembrane (NM) platform for releasing thin films from growth substrates.
  • Epitaxial growth of high-Ge-content SiGe films on GaAs(001) below critical thickness.
  • Selective etching of a release layer to achieve strain relaxation.
  • Transferring and overgrowing nanomembranes on new hosts for thicker single crystals.

Main Results:

  • Successful growth of single-crystal Ge-rich SiGe alloys using the NM platform.
  • Fabrication of crystalline nanomembranes at the natural lattice constant of the alloy.
  • Demonstrated feasibility of creating a wide range of group IV alloys, including those with tin (Sn).

Conclusions:

  • The NM platform offers a versatile route for fabricating novel group IV alloys.
  • This approach enables band gap engineering for new group IV optoelectronic devices.
  • The method facilitates the creation of thicker, high-quality single crystals of SiGe alloys.