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Rendering SiO2/Si Surfaces Omniphobic by Carving Gas-Entrapping Microtextures Comprising Reentrant and Doubly Reentrant Cavities or Pillars
Published on: February 11, 2020
Exploring Strategies to Contact 3D Nano-Pillars
Esteve Amat1, Alberto Del Moral1, Marta Fernández-Regúlez1
1Institute of Microelectronics of Barcelona (IMB-CNM), CSIC, 08193 Barcelona, Spain.
Abstract:
This contribution explores different strategies to electrically contact vertical pillars with diameters less than 100 nm. Two process strategies have been defined, the first based on Atomic Force Microscope (AFM) indentation and the second based on planarization and reactive ion etching (RIE). We have demonstrated that both proposals provide suitable contacts. The results help to conclude that the most feasible strategy to be implementable is the one using planarization and reactive ion etching since it is more suitable for parallel and/or high-volume manufacturing processing.

