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Updated: Dec 24, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Scalable and Universal Route for the Deposition of Binary, Ternary, and Quaternary Metal Sulfide Materials from
Ghulam Murtaza1,2, Suliman Alderhami1, Yasser T Alharbi1
1Department of Chemistry, University of Manchester, Oxford Road, Manchester M13 9PL, United Kingdom.
Abstract:
A range of binary, ternary (CFS), and quaternary (CZTS) metal sulfide materials have been successfully deposited onto the glass substrates by air-spray deposition of metal diethyldithiocarbamate molecular precursors followed by pyrolysis (18 examples). The as-deposited materials were characterized by powder X-ray diffraction (p-XRD), Raman spectroscopy, secondary electron microscopy (SEM), and energy-dispersive X-ray (EDX) spectroscopy, which in all cases showed that the materials were polycrystalline with the expected elemental stoichiometry. In the case of the higher sulfides, EDX spectroscopy mapping demonstrated the spatial homogeneity of the elemental distributions at the microscale. By using this simple and inexpensive method, we could potentially fabricate thin films of any given main group or transition metal chalcogenide material over large areas, theoretically on substrates with complex topologies.

