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Anomalous Hall Effect, Robust Negative Magnetoresistance, and Memory Devices Based on a Noncollinear

Peixin Qin1, Zexin Feng1, Xiaorong Zhou1

  • 1School of Materials Science and Engineering, Beihang University, Beijing 100191, China.

ACS Nano
|April 17, 2020
PubMed

Keywords:
Mn3GeWeyl fermionsanomalous Hall effectmemory devicesnoncollinear antiferromagnets

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