Photolithographically Constructed Single ZnO Nanowire Device and Its Ultraviolet Photoresponse
Quanli Liu1, Takao Yasui2,3,4, Kazuki Nagashima5,6
1Department of Biomolecular Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa, Nagoya, 464-8603, Japan. liu.quanli@g.mbox.nagoya-u.ac.jp.
Abstract:
A sparse ZnO nanowire array with aspect ratio of ca. 120 and growth rate of 1 μm/h was synthesized by controlling the density of seeds at the initial stage of nanowire growth. The spatially-separated nanowires were cut off from the growth substrate without breaking, and thus were useful in the construction of a single-nanowire device by photolithography. The device exhibited a linear current-voltage characteristic associated with ohmic contact between ZnO nanowire and electrodes. The device further demonstrated a reliable photoresponse with an IUV/Idark of ∼100 to ultraviolet light irradiation.
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