Achieving ferromagnetic insulating properties in La0.9Ba0.1MnO3 thin films through nanoengineering
Chao Yun1, Eun-Mi Choi, Weiwei Li
1Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK. jld35@cam.ac.uk.
Nanoscale
|April 21, 2020
Summary
Thin film nanoengineering of La0.9Ba0.1MnO3 (LBMO) created vertically aligned nanocomposite films. These films exhibit ferromagnetic insulating properties, overcoming challenges in translating bulk properties to thin films for spintronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Strongly correlated manganites display unique magnetic and electronic properties, such as ferromagnetism and insulation.
- Translating bulk properties of these materials to thin films presents significant challenges.
- La0.9Ba0.1MnO3 (LBMO) is a key material system for studying these phenomena.
Purpose of the Study:
- To overcome the limitations in thin film fabrication of manganites.
- To engineer La0.9Ba0.1MnO3 (LBMO) thin films with enhanced properties.
- To investigate the effects of strain and doping on the magnetic and electronic behavior of LBMO.
Main Methods:
- Fabrication of vertically aligned nanocomposite (VAN) thin films of LBMO + CeO2.
- Utilizing CeO2 nanocolumns within an LBMO matrix to induce uniform tensile strain.
- Implementing light Ce doping into the LBMO matrix via intrinsic cation vacancies.
Main Results:
- The VAN LBMO films exhibited ferromagnetic insulating properties at 188 K.
- The combined strain and doping significantly reduced double exchange coupling and metallicity.
- Plain reference LBMO films showed an insulator-to-metal transition above 200 K due to defects.
Conclusions:
- This study demonstrates a novel combined strain and doping approach using VAN systems for material property engineering.
- Achieved ferromagnetic insulating properties in LBMO thin films, which are not attainable in plain films.
- Represents a significant advancement for developing high-performance spintronic and multiferroic thin film devices.


