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Gradient Echo Quantum Memory in Warm Atomic Vapor
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Organic Transistor Nonvolatile Memory with Three-Level Information Storage and Optical Detection Functions.

Ting Xu1, Shuxu Guo1, Weihao Qi1

  • 1College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.

ACS Applied Materials & Interfaces
|April 23, 2020
PubMed
Summary

This study presents novel organic field-effect transistor nonvolatile memories (FG-OFET NVMs) capable of multilevel information storage. These devices utilize a unique polymer layer and photoelectric effects for enhanced data density and function.

Keywords:
floating-gatelight detectormultilevel memoriesnonvolatile memoriesorganic field-effect transistorsphototransistor

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Area of Science:

  • Materials Science
  • Organic Electronics
  • Semiconductor Physics

Background:

  • Conventional binary floating-gate-based organic field-effect transistor (FG-OFET) nonvolatile memories (NVMs) face challenges in achieving ultrahigh-density information storage.
  • Developing multilevel memory cells is a feasible solution to overcome these limitations.

Purpose of the Study:

  • To demonstrate FG-OFET NVMs with an integrated polymer floating-gate/tunneling (I-FG/T) layer for multilevel information storage.
  • To leverage the photoelectric effect of organic semiconductors for improved charge control in the floating-gate.
  • To integrate light sensitivity with nonvolatile information storage functions.

Main Methods:

  • Fabrication of FG-OFET NVMs using an I-FG/T layer composed of poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) and polystyrene.
  • Utilizing the photoelectric effect of organic/polymer semiconductors to control charge polarity and storage in the floating-gate.
  • Investigating memory mechanisms and performance dependence on F8BT content through optical and electrical programming/erasing conditions.

Main Results:

  • Achieved three-level information storage states (electron, neutral, hole storage) with free switching.
  • Demonstrated good memory performances, including mobility > 1.0 cm² V⁻¹ s⁻¹.
  • Obtained reliable three-level switching endurance (>100 cycles) and stable retention (>20,000 s).
  • Successfully demonstrated an imaging system with nonvolatile storage using a 16 × 5 array of FG-OFET NVMs.

Conclusions:

  • The developed FG-OFET NVMs with an I-FG/T layer offer a viable approach for multilevel information storage.
  • The integration of photoelectric effects enhances charge controllability and memory functionality.
  • These devices show promising performance for advanced nonvolatile memory applications and integrated imaging systems.