Anisotropic Transport Property of Antimonene MOSFETs

As silicon-based electronic devices rapidly reach their scaling limits, novel two-dimensional (2D) semiconductors, such as graphene nanoribbon, transition metal dichalcogenides, and phosphorene, are becoming promising channel materials. Antimonene has been proved suitable for ultrascaled field-effect transistors (FETs) benefiting from its superior semiconducting properties. Considering that antimonene shows different effective mass from 0° (zigzag) to 30° (armchair), we have calculated the anisotropic transport property of monolayer (ML) antimonene metal-oxide-semiconductor FET (MOSFETs), including on-state current, subthreshold swing, effective mass, intrinsic delay time, and power dissipation. Encouragingly, 0° (zigzag) and 19.1° directions ML antimonene MOSFETs with 4 nm gate length and 1 nm underlap achieve the International Technology Roadmap for Semiconductors (ITRS) high-performance (HP) goal in 2028. The performance of ML antimonene MOSFETs still can fulfill the ITRS HP goal, when the spin-orbit coupling effect is considered. The magnitude of on-state currents in all calculations generally varies inversely with the effective mass. Therefore, we predict that other transmission directions with effective masses between 0.291 and 0.388 m₀ can also achieve the ITRS HP goal, which enables antimonene to be a promising channel material.