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Published on: August 14, 2018
Kinetics of volume and surface driven crystallization in thin films
Y Vorobyov1, P Lazarenko2, A Sherchenkov2
1Ryazan State Radio Engineering University, Ryazan 390005, Russia.
This study introduces a new mathematical model for thin film crystallization, addressing limitations of existing theories in finite-size systems. The model reveals non-uniform crystalline fraction distribution as a key characteristic in such systems.
Area of Science:
- Materials Science
- Physical Chemistry
- Condensed Matter Physics
Background:
- The Kolmogorov-Johnson-Mehl-Avrami (KJMA) theory is a cornerstone for understanding solid-state phase transformations, including crystallization.
- However, the standard KJMA theory has limitations when applied to finite-size systems, such as thin films.
- These limitations necessitate the development of new models that account for finite dimensions.
Purpose of the Study:
- To develop a novel mathematical model for the crystallization process in thin films.
- To overcome the limitations of the Kolmogorov-Johnson-Mehl-Avrami theory in finite-size systems.
- To analyze the impact of nucleation sites (boundaries and bulk) on crystallization kinetics.
Main Methods:
- Development of a mathematical model specifically for thin film crystallization.
- Incorporation of two distinct nucleation mechanisms: boundary nucleation and bulk nucleation.
- Derivation of a solution in terms of crystallization probability.
Main Results:
- The model successfully addresses the limitations of the KJMA theory for finite-size systems.
- A key finding is the non-uniform distribution of crystalline fraction within the thin film.
- Crystallization probability is used as a central metric to describe the process.
Conclusions:
- The proposed mathematical model provides a more accurate description of crystallization in finite-size thin films.
- Non-uniform crystalline fraction distribution is an inherent characteristic of crystallization in confined geometries.
- The model offers insights into controlling and predicting crystallization behavior in thin film applications.
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