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Non-Ohmic Variable-Range Hopping and Resistive Switching in SrTiO_{3} Domain Walls
H J Harsan Ma1,2, J F Scott3
1Low Dimensional Quantum Physics & Device Group, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi'an 710071, China.
Abstract:
We report observation of electric field driven conductivity with negative differential conductance and resistive switching in insulating SrTiO_{3} samples over a wide range of applied voltages at low temperatures. The observed current follows I=I_{0}exp[-(E^{*}/E)^{1/2}] at large applied electric field, corresponding to variable range hopping conduction with a Coulomb gap in domain walls. Our data are sufficient to discriminate unambiguously between Shklovskii and Mott hopping via their different electric field exponent. Under some conditions space-charge-limited currents are observed, and the charge mobility limit is determined to be in the range of 17 and 210 cm^{2}/Vs.
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