Ligand-Induced Luminescence Transformation in AgInS₂ Nanoparticles: From Defect Emission to Band-Edge Emission

I-III-VI₂ semiconductor nanoparticles are strong candidates for fluorescent materials composed of nontoxic elements substituting highly fluorescent CdSe nanoparticles. Photoluminescence of I-III-VI₂ nanoparticles essentially arise due to defect emission characterized by a broad spectral feature. Band-edge emission exhibits radiation with high monochromaticity, which can drastically expand its application range. Hence, numerous studies were conducted to realize band-edge emission. A successful observation of the band-edge emission was reported only when fabricating GaS or InS shells around AgInS₂ nanoparticles via surface trap site passivation. This study demonstrates a much easier method of providing band-edge emission from AgInS₂ nanoparticles using organic ligands of trioctylphosphine (TOP). Along with the TOP ligand formation around AgInS₂ nanoparticles, the defect emission increases once and then decreases in conjunction with the appearance of the band-edge emission. Therefore, TOP ligands can passivate carrier trapping sites for radiative recombination as well as fluorescence quenching sites.