Zn₂GeO_4-x/ZnS heterojunctions fabricated via in situ etching sulfurization for Pt-free photocatalytic hydrogen...

Interface engineering has been regarded as a promising strategy for enhancing the catalytic activities of heterojunction photocatalysts. Herein, we have adopted an in situ etching sulfurization method to construct a Zn2GeO4-x/ZnS intimate heterojunction, which exhibited excellent photocatalytic H2 production in the absence of a Pt co-catalyst. Distinctively, TEM and HRTEM measurements showed that the interface of the Zn2GeO4-x/ZnS heterojunction became rough (topologically) due to in situ etching sulfurization, and etching was found to be strongly dependent on the crystal orientation. Moreover, the surface of the Zn2GeO4 nanorods from flat (100) planes evolved into an irregular coastline-like structure topologized with (110) and (113) high-index planes. ICP and elemental distribution measurements indicated that during the precipitation of ZnS via in situ etching sulfurization, the migration and dissolution of Zn and Ge ions on the Zn2GeO4(100) plane led to the roughening of the interface and the evolution of crystal planes. XPS and EPR analyses showed that Zn2GeO4-x/ZnS contained more oxygen vacancies with structural evolution. The theoretical calculations demonstrated that oxygen defects were prone to be generated on the Zn2GeO4(113) plane and formed the Ge3c3+-VO complexes. Compared to the inactive (100) plane, etching caused the Zn2GeO4(110) planes to have a higher number of threefold coordinated germanium (Ge3c4+) and (113) high-index planes that possessed abundant active sites (Ge3c3+-VO complexes), which dramatically decreased the barrier and reaction energy of H2O dissociation. This work not only provides fundamental insights into the topological interface evolution and facet-dependent defect distribution but also offers a strategy for the design of efficient photocatalysts for H2 production without the use of Pt as a co-catalyst based on a multifunctional interface.