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Benzo[b]selenophene/thieno[3,2-b]indole-Based N,S,Se-Heteroacenes for Hole-Transporting Layers
Nadezhda S Demina1,2, Nikolay A Rasputin1,2, Roman A Irgashev1,2
1I. A. Postovsky Institute of Organic Synthesis, Ural Division, Russian Academy of Sciences, S. Kovalevskoy Str., 22, Ekaterinburg 620990, Russia.
New N,S,Se-heteroacenes were synthesized for organic electronics. These novel compounds show promising properties for hole-transporting materials, with potential applications in advanced electronic devices.
Area of Science:
- Organic Chemistry
- Materials Science
- Condensed Matter Physics
Background:
- Development of novel organic semiconductors is crucial for advancing organic electronics.
- Heteroacenes offer tunable electronic properties through structural modification.
Purpose of the Study:
- To synthesize and characterize new N,S,Se-heteroacenes.
- To evaluate their potential as hole-transporting materials for organic electronic applications.
Main Methods:
- Fiesselmann thiophene synthesis.
- Fischer indole synthesis.
- Optical band gap and HOMO energy level measurements.
- Carrier mobility measurements using CELIV technique.
Main Results:
- Successful synthesis of two series of N,S,Se-heteroacenes.
- Large optical band gaps (2.82–3.23 eV) observed.
- Highest occupied molecular orbital (HOMO) energy levels ranged from -5.2 to -5.6 eV.
- Hole mobility in thin films measured between 10^-5 and 10^-4 cm^2·V^-1·s^-1.
Conclusions:
- The synthesized heteroacenes possess favorable electronic and optical properties.
- Selenated heteroacenes exhibit narrower band gaps and lower HOMO levels.
- These compounds represent a promising platform for developing efficient hole-transporting materials in organic electronics.
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