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Updated: Dec 22, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Reversible Transformation between Bipolar Memory Switching and Bidirectional Threshold Switching in 2D Layered

Meilin Tu1, Haipeng Lu2, Songwen Luo1

  • 1College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China.

ACS Applied Materials & Interfaces
|May 6, 2020
PubMed
Summary

Researchers developed new manganese dioxide (MnO2) nanosheet devices exhibiting tunable resistive switching. These 2D layered materials show potential for advanced memory applications by switching between nonvolatile and volatile states.

Keywords:
2D layered nanosheetsK-birnessitememory switchingresistive switchingthreshold switching

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • Birnessite-related manganese dioxides (MnO2) feature diverse low-dimensional layered structures.
  • Their unique layered architecture offers potential for distinct electrical properties in 2D nanosheets, crucial for energy devices.

Purpose of the Study:

  • To synthesize K-birnessite MnO2 nanosheets using a hydrothermal method.
  • To fabricate and investigate resistive switching (RS) devices based on single K-birnessite MnO2 nanosheets.

Main Methods:

  • Hydrothermal synthesis of layered K-birnessite MnO2.
  • Mechanical exfoliation for transferring nanosheets onto SiO2/Si substrates.
  • Fabrication of single-layer nanosheet devices for electrical characterization.

Main Results:

  • Devices demonstrated nonvolatile memory switching (MS) with a high ON/OFF ratio (~2 × 10^5).
  • Reversible switching between nonvolatile MS and volatile threshold switching (TS) was achieved by tuning compliance current (Icc).
  • High Icc (1 mA) induced nonvolatile MS, while low Icc (≤100 μA) resulted in volatile TS.

Conclusions:

  • Demonstrated a functional memristor based on a single birnessite-related MnO2 nanosheet.
  • Provided insights into the complex resistive switching behaviors and physical mechanisms in 2D layered oxide nanosheets.