Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

Understanding Memory

Understanding Memory

Memory is the retention of information or experiences over time, facilitated through three main processes: encoding, storage, and retrieval. Encoding is the process of inputting information into the memory system. For instance, when listening to a lecture, watching a play, reading a book, or having a conversation, the brain is actively encoding information. This initial stage involves transforming sensory input into a form that can be processed and stored by the brain. Various factors, such as...

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

Bipolar Junction Transistor

Bipolar Junction Transistor

Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...

Mnemonic Devices

Mnemonic Devices

Mnemonic devices are cognitive tools that facilitate memory retention by linking new information to familiar patterns or organizational strategies. These techniques are beneficial for remembering complex or lengthy sets of information by simplifying and structuring them in easily retrievable ways.
Acronyms
Acronyms are created by using the initial letters of a series of words to form a new word or phrase. This approach condenses complex information into a single, memorable entity. For example,...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Large Temperature-invariant Anomalous Nernst Effect in Non-collinear Antiferromagnet Mn<sub>3</sub>Pt.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026

Same author

Engineering temperature- and radiation-resistant van der Waals oxide optoelectronics via heteroatom-intercalation.

Nature communications·2026

Same author

Ferroelectricity-modulated asymmetric van der Waals heterostructure for ultralow-power neuromorphic synapse and logic-in-memory operations.

Nature communications·2026

Same author

Ferroelectricity-driven strain-mediated magnetoelectric coupling in two-dimensional multiferroic heterostructure.

Nature communications·2025

Same author

Seeded Solid-Phase Epitaxy of Wafer-Scale 2H-MoTe<sub>2</sub> Single-Crystal Arrays through Spatially Confined Single Nucleation.

ACS nano·2025

Same author

Enhanced Giant Ferroelectric Tunneling Electroresistance in 2D Ruddlesden-Popper Oxides.

ACS nano·2025

Search research articles

Related Experiment Video

Updated: Dec 22, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

Two-Dimensional Unipolar Memristors with Logic and Memory Functions.

Lei Yin^1,2, Ruiqing Cheng^1,2, Zhenxing Wang^1,2

¹CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China.

|May 6, 2020

Summary

This summary is machine-generated.

This study demonstrates novel logic functions using two-dimensional materials like HfSe2-Ox and MoS2/graphene heterostructures. These materials enable efficient in-memory computing with high performance and multibit data storage.

Keywords:

2D devices in-memory computing memtransistors unipolar memristors

More Related Videos

A Method for Growing Bio-memristors from Slime Mold

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Related Experiment Videos

Last Updated: Dec 22, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

A Method for Growing Bio-memristors from Slime Mold

A Method for Growing Bio-memristors from Slime Mold

Published on: November 2, 2017

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Area of Science:

Materials Science
Nanotechnology
Electronics Engineering

Background:

Two-dimensional (2D) materials offer unique electrical properties beyond traditional materials.
Memristive devices are crucial for advanced electronics and in-memory computing.

Purpose of the Study:

To demonstrate logic functions using unipolar memristors and memtransistors based on 2D materials.
To explore the potential of these devices for in-memory computing applications.

Main Methods:

Fabrication of unipolar memristors from functionalized HfSe2-Ox flakes.
Construction of memtransistors using MoS2/graphene/HfSe2-Ox van der Waals heterostructures.
Characterization of device performance, including switching behavior, endurance, and operating temperature.

Main Results:

HfSe2-Ox memristors showed stable unipolar switching with high ratio (>10^6), high operating temperature (106 °C), and long endurance (>10^4 s).
Devices exhibited multibit data storage, functioning as memory latches and logic gates.
Heterostructure memtransistors demonstrated tunable switching for simultaneous logic and data storage.
Successful investigation of application in D-type flip-flops for logical units with memory.

Conclusions:

2D materials show significant potential for resistive switching applications.
The developed devices pave the way for future in-memory computing architectures.
Functionalized HfSe2-Ox and heterostructures offer a promising platform for next-generation electronics.