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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
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In Situ 2D MoS2 Field-Effect Transistors with an Electron Beam Gate
Paul Masih Das1, Marija Drndić1
1Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.
ACS Nano
|May 8, 2020
Summary
Transmission electron microscopy (TEM) beams can control monolayer molybdenum disulfide (MoS2) transistor properties by charging the substrate. This electron beam gating enables tunable on/off ratios without damaging the material.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional materials like molybdenum disulfide (MoS2) offer unique electronic properties.
- In situ characterization techniques are crucial for understanding material behavior under operating conditions.
- Developing novel gating methods is essential for advancing nanoscale electronic devices.
Purpose of the Study:
- To investigate the use of a transmission electron microscope (TEM) beam for in situ electrical modulation of monolayer MoS2.
- To explore the feasibility of electron beam gating for creating field-effect transistor characteristics.
- To assess the impact of electron beam irradiation on MoS2 channel conductance and structural integrity.
Main Methods:
- Fabrication of a two-terminal monolayer MoS2 channel on a silicon nitride substrate.
- Utilizing a TEM beam to irradiate the substrate near the MoS2 channel.
- Measuring current-voltage characteristics and monitoring conductance changes as a function of beam current and position.
Main Results:
- Significant suppression of MoS2 channel conductance (up to 94%) was observed due to substrate charging by the electron beam.
- Gate-tunable transistor characteristics were achieved, dependent on beam current, even at a distance from the channel.
- High on/off ratios (up to ~60) were obtained, with no observed structural damage to MoS2 and reversible conductance changes.
Conclusions:
- Electron beam irradiation of the substrate effectively modulates the electrical conductance of monolayer MoS2.
- A novel TEM field-effect transistor architecture utilizing electron beam gating has been demonstrated.
- This technique offers a promising platform for in situ electrical measurements and device characterization at the nanoscale.
Keywords:
electronic transportfield-effect transistorin situ transmission electron microscopymolybdenum disulfidesilicon nitridetransition metal dichalcogenidesMore Related Videos
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