Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Ligand Engineering for Precise Control of Ultrathin CsPbI<sub>3</sub> Nanoplatelet Superlattices for Efficient Light-Emitting Diodes.

Advanced materials (Deerfield Beach, Fla.)·2026

Same author

Clinicopathological Challenge: A Painful Violaceous Reticulated Patch.

International journal of dermatology·2026

Same author

Near-Theoretical-Limit Doping of Poly(benzodifurandione) through Carbonyl-Driven Aminoalkylsilane Attachment.

Journal of the American Chemical Society·2026

Same author

Diol-enhanced natural deep eutectic solvents for efficient poplar pretreatment.

Frontiers in chemistry·2026

Same author

Role of Tosylate Anions in Small Molecule Electrolytes Enabling Defect Passivation by Regulating Zinc Coordination of Zinc Oxide Hybrid Films for Organic Solar Cells.

Small methods·2026

Same author

Factors Predicting Guselkumab Treatment Response in Patients with Moderate-to-Severe Plaque Psoriasis: A Post Hoc Analysis of Korean Real-World Data.

Journal of clinical medicine·2026

Search research articles

Related Experiment Video

Updated: Dec 22, 2025

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Published on: March 19, 2017

Bilateral Interface Engineering for Efficient and Stable Perovskite Solar Cells Using Phenylethylammonium Iodide.

Yuanyuan Zhang^1,2, Soyeong Jang^1,2, In-Wook Hwang³

¹Department of Physics, Pukyong National University, Busan 48513, South Korea.

ACS Applied Materials & Interfaces

|May 8, 2020

Summary

Phenylethylammonium iodide (PEAI) interface engineering enhances perovskite solar cell (PeSC) efficiency and stability. This method improves perovskite quality and creates a protective 2D layer, significantly boosting device lifetime under humid conditions.

Keywords:

PEAI bilateral interface engineering high efficiency long-term stability perovskite solar cells

More Related Videos

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Published on: February 27, 2017

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

Related Experiment Videos

Last Updated: Dec 22, 2025

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells

Published on: March 19, 2017

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

Published on: February 27, 2017

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

Area of Science:

Materials Science
Renewable Energy
Photovoltaics

Background:

Commercialization of perovskite solar cells (PeSCs) hinges on improving device efficiency and long-term stability.
Methylammonium lead triiodide (MAPbI3)-based PeSCs face challenges with degradation, particularly under environmental stress.

Purpose of the Study:

To enhance the efficiency and stability of MAPbI3-based PeSCs using phenylethylammonium iodide (PEAI)-induced interface engineering.
To investigate the effects of PEAI on the perovskite active layer and device performance.

Main Methods:

Bilateral interface engineering using PEAI on a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) layer.
Formation of a 2D/3D stacked perovskite structure by depositing PEAI onto the 3D perovskite layer.
Characterization of device performance and stability under high-humidity conditions.

Main Results:

PEAI treatment modified PEDOT:PSS surface properties, promoting larger perovskite grains and improved charge transfer.
The 2D/3D perovskite structure effectively protected the active layer from water penetration, enhancing stability.
PEAI-treated PeSCs retained 88% of their initial PCE after 100 hours in 75% humidity, while pristine devices degraded by over 99% in 25 hours.

Conclusions:

PEAI-induced bilateral interface engineering is a viable strategy for significantly improving both the efficiency and operational stability of MAPbI3-based PeSCs.
The developed method offers a pathway towards more robust and commercially viable perovskite solar technology.