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Updated: Dec 21, 2025

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Nitroaromatics as n-type organic semiconductors for field effect transistors
Muhammad Rizwan Niazi1, Ehsan Hamzehpoor1, Pegah Ghamari1
1Department of Chemistry, McGill University, 801 Sherbrooke Street West, Montreal, Quebec H3A 0B1, Canada. dmitrii.perepichka@mcgill.ca.
Abstract:
The nitro group (NO2) is one of the most common electron-withdrawing groups but it has rarely been used in the design of organic semiconductors (OSCs). Herein, we report the n-type semiconducting behavior of simple fluorenone derivatives functionalized with NO2 and CN groups. While the electron mobilities measured in the thin film field-effect transistors are modest (10-6-10-4 cm2 V-1 s-1), the nitrofluorenone OSCs offer excellent air-stability and remarkable tunability of energy levels via facile modification of the substitution pattern. We study the effect of substituents on the electrochemical properties, molecular and crystal structure, and the charge transport properties of nitrofluorenones to revitalize the underestimated potential of NO2 functionalization in organic electronics.
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