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Fabrication of Microbolometer Arrays Based on Polymorphous Silicon-Germanium.

Ricardo Jimenez1, Mario Moreno1, Alfonso Torres1

  • 1Electronics Group, National Institute of Astrophysics, Optics and Electronics, Puebla 72840, Mexico.

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Summary

Arrays of infrared sensors were developed using a novel hydrogenated polymorphous silicon-germanium alloy (pm-SiGe:H). These microbolometers demonstrate excellent performance and stability for infrared detection applications.

Keywords:
arraygermaniuminfraredmicrobolometerplasma-enhanced chemical vapor depositionpolymorphoussensorsilicon

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Area of Science:

  • Materials Science and Engineering
  • Semiconductor Physics
  • Infrared Technology

Background:

  • Polymorphous semiconductors feature nanocrystals within an amorphous matrix.
  • Hydrogenated polymorphous silicon-germanium (pm-SiGe:H) alloys are explored for their unique electronic properties.

Purpose of the Study:

  • To develop and characterize infrared sensor arrays (microbolometers) using a pm-SiGe:H alloy.
  • To evaluate the performance and stability of these microbolometers for infrared radiation detection.

Main Methods:

  • Fabrication of microbolometers using plasma-enhanced chemical vapor deposition (PECVD) at 200 °C.
  • Electrical characterization of a 19x20 microbolometer array.
  • Measurement of temperature coefficient of resistance (TCR), conductivity, voltage responsivity, detectivity, and noise equivalent power.

Main Results:

  • The pm-SiGe:H alloy exhibited a high TCR of 4.08%/K and conductivity of 1.5 × 10-5 S∙cm-1.
  • Achieved voltage responsivity of 4 × 104 V/W and detectivity of 2 × 107 cm∙Hz1/2/W.
  • Demonstrated excellent mechanical stability and response to infrared radiation at room temperature.

Conclusions:

  • The developed pm-SiGe:H microbolometer arrays show promising performance for infrared sensing.
  • The material's properties and device stability make it suitable for advanced infrared detector applications.