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Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
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Size effect on excess resistivity induced by hydrogen in ultra-thin vanadium systems

Wen Huang1, Martin Brischetto2, Parker Steichen2

  • 1State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China. wenhuang862017@163.com and Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20, Uppsala, Sweden.

Physical Chemistry Chemical Physics : PCCP
|May 14, 2020
PubMed
Summary

A significant vanadium size effect impacts excess resistivity changes during hydrogenation in Fen/V7n superlattices. This highlights the crucial roles of interfaces and hydrogen interactions in their electrical properties.

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