Size effect on excess resistivity induced by hydrogen in ultra-thin vanadium systems
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Updated: Dec 21, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Wen Huang1, Martin Brischetto2, Parker Steichen2
1State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China. wenhuang862017@163.com and Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20, Uppsala, Sweden.
Abstract:
Through combining a four-point probe and an optical technique, a profound vanadium(v) size effect on the change in excess resistivity during hydrogenation is observed in Fen/V7n (n = 2, 4) superlattices at c ≥ 0.05 H/V. This phenomenon highly emphasizes the effect of interface and H-H interaction on the electrical properties of hydrogen in these systems.
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