Low-loss GaO_x-core/SiO₂-cladding planar waveguides on Si substrate

The unique properties of gallium oxide (GaO_x) have drawn increasing interest as a material suitable for high-power electronic and optical applications. Herein, we report the demonstration of low-loss GaO_x-core/SiO₂-cladding waveguides on Si substrate. We present the fabrication process and annealing treatments of the waveguide devices, and we characterize the corresponding effects on optical transmission for 3 common wavelengths: 633 nm, 1064 nm, and 1550 nm. The best propagation loss achieved for these wavelengths is measured to be -0.4±0.1dB/cm, -0.3±0.2dB/cm, and -2.4±0.5dB/cm, respectively. We discuss the major waveguide loss mechanisms, followed by results of pump and probe experiments using visible/IR wavelengths for waveguides treated under various post-fabrication annealing conditions. We also show nonlinear measurements for a 250 fs laser beam to offer additional insights into the loss mechanisms, which are consistent with the linear optical transmission performances. High waveguide laser-induced damage threshold (LIDT) of >2.5J/cm² is measured at this pulse width, making GaO_x a potential candidate for high-power integrated photonic devices.